Address
E02 No.509 Floor 5 Unit3 Building1 No.1700 Tianfu Avenue North Section High-tech district Chengdu City Pilot Free Trade Zone China(Sichuan)
Work Hours
Monday to Friday: 9AM - 6PM
Weekend: 10AM - 5PM
Electron mixture gas
Contact Now For This Product
In the electronic gas family, silane, phosphoane, borane and arsenane are used in large quantities, which are very important raw materials for IC manufacturing.
The electronic industry services a wide variety of electronic gas, a variety of uses, we can provide all kinds of gas mixtures according to customer needs.
Refers to a gas containing two or more active components, or a non-active component whose content exceeds the specified limit. A mixture of several gases that is commonly used as working medium in engineering. Gas mixtures are usually studied as ideal gases.
Electron gas mixture summary
| 序号No. | Electron gas mixture summary |
| 1 | 二氯硅烷（DCS)5000ppm + N2； 二氯硅烷（DCS) 15ppm + N2 |
| 2 | 二氯硅烷（DCS)10 ppm + 三氯硅烷(TCS)10 ppm + 氦He |
| 3 | HCl 50ppm + 二氯硅烷（DCS)1000ppm + 平衡He |
| 4 | 硅烷（H4Si）1% + 二氯硅烷（DCS)1% + 三氯硅烷(TCS)1% + 四氯化硅Cl4Si 1% +N2 |
| 5 | 硅烷（H4Si）50ppm + 三氯硅烷(TCS)1000ppm + He |
| 6 | 三氯硅烷(TCS) 15ppm + N2 |
| 7 | 乙硅烷(Si2H4） 100ppm ～ 200ppm + H2 |
| 8 | 乙硅烷 10ppm + He |
| 9 | CO2 5ppm+硅烷（H4Si）135ppm + 乙硅烷 (Si2H4）1000ppm + He |
| 10 | SiH4 5ppm～15%+Ar(H2/N2/He) |
| 11 | H2 5ppm + Ar 5ppm +N2 5ppm +CO 5ppm + CH4 5ppm + CO2 5ppm + 硅烷 （H4Si）1000ppm 的平衡He |
| 12 | 乙硼烷（B2H6） 50～100ppm + H2 |
| 13 | 砷烷（AsH3） 100ppm～0.7% + H2 |
| 14 | 锗烷（GeH4） 1%～10% + H2 |
| 15 | 三氯化硼（BCl3）1%～5% + N2（He） |
| 16 | PH3 0.8ppm ～ 500ppm + He(H2) |
| 17 | HCl 9ppm～50% + N2 |
| 18 | NF3 99.99% 180g～1500g |
| 19 | NF3 20ppm～30ppm + Air |
| 20 | NF3 15ppm + N2 |
| 21 | CF4 80% + O2 |
| 22 | Ar 5ppm～80% + Ne（H2/He/N2） |
| 23 | Kr 8%～50% + Ar |
| 24 | Ne 80%～97% + Ar |
Application
Also used in semiconductor manufacturing process chemical vapor deposition, crystal growth, thermal oxidation, epitSome of the gases can be directly used as semiconductor sources, such as silicon source, boron source, phosphorus source and chemical vapor deposition (CVD) source.axy, diffusion, polysilicon, tungstate, ion implantation, current carrier, sintering, etc.
In the large-scale integrated circuit (LSI), VLSI (VLSI), semiconductor and electronic device production and processing process, electronic gas is mainly used in gas phase epitaxial growth, chemical vapor deposition, doping (impurity diffusion), etching, ion injection, sputtering, annealing, system pressure, clean purge, suction covering, oxidation and reduction processes.
Reference
Packing and Delivery
