Address
E02 No.509 Floor 5 Unit3 Building1 No.1700 Tianfu Avenue North Section High-tech district Chengdu City Pilot Free Trade Zone China(Sichuan)
Work Hours
Monday to Friday: 9AM - 6PM
Weekend: 10AM - 5PM
Address
E02 No.509 Floor 5 Unit3 Building1 No.1700 Tianfu Avenue North Section High-tech district Chengdu City Pilot Free Trade Zone China(Sichuan)
Work Hours
Monday to Friday: 9AM - 6PM
Weekend: 10AM - 5PM

| CAS NO | 7783-82-6 |
| UN NO | UN2196 |
| EINECS NO | 232-029-1 |
| Molecular weight | 297.83 |
| Appearance | Colorless gas |
| Melting point | 2.3 ℃ |
| Boiling point | 17.1 ℃ |
| Density | 13.0 kg/m |
| DOT Class | 2.3 |
| Label | Toxic gas |
Tungsten hexafluoride (WF₆) is an essential electronic gas used in the chemical vapor deposition process in semiconductor manufacturing. It can be reduced by hydrogen, thereby depositing high-purity tungsten films in chip holes and contact holes, making it a crucial interconnection metal material.

Semiconductor Chemical Vapor Deposition (CVD): As a core raw material, tungsten films are deposited on the surface of wafers for filling contact holes and manufacturing interconnects within the chips. It is particularly suitable for 3D NAND flash memory (with breakthroughs in the number of layers reaching 232 and 300 layers) and advanced storage chips such as DRAM, as well as advanced logic chips with a 7nm or lower manufacturing process.

Preparation of high-purity tungsten and coatings: Prepare high-purity tungsten powder as an gaseous raw material; or form a hard tungsten carbide coating on the surface of steel using CVD technology, which is used for aerospace engine components, high-temperature molds, and protective layers of nuclear fusion devices to enhance wear resistance and high-temperature resistance.

Atomic Layer Deposition (ALD): In advanced manufacturing processes with a feature size of 5nm and below, it is used to deposit tungsten films that are denser, more uniform, and have controllable thickness.
| Specification | 99.9999% |
| O2+Ar | <0.001 ppbw |
| N2 | <0.001 ppbw |
| CO | <0.003 ppbw |
| CO2 | <0.008 ppbw |
| Li | <0.001 ppbw |
| Na | <0.001 ppbw |
| Mg | 0.01 ppbw |
| Al | <0.002 ppbw |
| K | <0.001 ppbw |
| Ca | <0.001 ppbw |
| Specification | 99.9999% |
| Cr | <0.001 ppbw |
| Mn | <0.001 ppbw |
| Fe | <0.003 ppbw |
| CO | <0.003 ppbw |
| Ni | <0.004 ppbw |
| Cu | <0.001 ppbw |
| Zn | <0.001 ppbw |
| Cd | <0.001 ppbw |
| Pb | <0.001 ppbw |
| Th | <0.001 ppbw |
| Specification | 99.9999% |
| U | <0.001 ppbw |
| P | <0.010 ppbw |
| Ti | <0.001 ppbw |
| As | <0.001 ppbw |
| Mo | <0.001 ppbw |
| Si | <0.001 ppbw |
| B | <0.003 ppbw |
| SiF4 | <0.003 ppbw |
| SF6 | <0.027 ppbw |
| HF | 0.185 ppbw |
| CF4 | <0.010 ppbw |
| Other metals | <0.001 ppbw |
| Cylinder Capacity | Valve | Weight |
|---|---|---|
| 40L | CGA 590 / QF-2 | 100 kgs |








